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FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET

FDY4001CZ Description

FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET .
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS.

FDY4001CZ Features

* Q1: N-Channel
* Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA
* Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA

FDY4001CZ Applications

* Level shifting
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
* Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA
* Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA
* Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA
* ESD

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Datasheet Details

Part number
FDY4001CZ
Manufacturer
Fairchild Semiconductor
File Size
391.97 KB
Datasheet
FDY4001CZ_FairchildSemiconductor.pdf
Description
Complementary N & P-Channel PowerTrench MOSFET

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Complementary P-Channel PowerTrench MOSFET Fairchild Semiconductor
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