Q1: N-Channel
* Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA
* Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA
* Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Cha.
* Level shifting
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
* Max rDS.
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.
Applications
* Level shifting
* Power Supply Co.
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