Description
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.
Level shifting
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA
Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA
Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA
Features
- Q1: N-Channel.
- Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA.
- Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA.
- Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel
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General.
FDY4001CZ Datasheet
